What is atomX?

State‑of‑the‑art atomistic quantum transport for next‑generation nanoelectronic devices

atomX is a high‑performance dissipative DFT‑NEGF simulator that brings first‑principles accuracy together with practical speed and memory footprint—so you can explore realistic devices with up to millions of atoms and go from materials to I‑V characteristics with confidence.

From atoms to IVs (DFT‑NEGF pipeline)
From atoms to IVs (DFT‑NEGF pipeline).
The Problem

Why traditional approaches fall short

Gaps in today’s exploration workflows

  • Emerging materials and interfaces demand atomistic, parameter‑free models to avoid guesswork and capture full‑band effects.
  • Engineering‑relevant simulations require realistic device sizes and  dissipative physics—not just idealized ballistic models.
  • Teams need repeatable, automated flows from supercells to device results for rapid learning cycles.

What this means in practice

  • Slow, memory‑heavy runs limit design‑space exploration.
  • Interfaces/contacts and heterostructures are hard to capture with simplified models.
  • Manual supercell creation and data wrangling adds friction and inconsistency.
The Solution

atomX: from atoms to device‑level insight

atomX combines ab‑initio DFT‑based Hamiltonians with a dissipative, self‑consistent NEGF solver to predict transport with high fidelity—covering quantum confinement, tunneling, and scattering by construction.

Use DFT‑NEGF for novel materials and interfaces, or switch to tight‑binding / effective mass where speed matters. Evaluate materials, contacts, stacks, and device geometries—then deliver clean I–V and band/DoS analyses.

AtomX GUI: A powerful graphical user interface for efficient and automated  management of your simulation projects.
AtomX GUI: A powerful graphical user interface for efficient and automated  management of your simulation projects.
Capabilities

Key features & benefits

Ab‑initio accuracy

DFT‑based Hamiltonians (plane‑wave + Wannier or localized orbital) feed directly into NEGF—parameter‑free for new materials.

Interfaces & stacks

Model explicit contacts and van der Waals heterostructures to optimize SBH and tunneling.

Speed & scale

Massively parallel solvers, memory‑lean data structures, and mode‑space acceleration for practical runtimes with large devices up to millions of atoms.

Scattering included

Accurate electron–phonon scattering with self‑consistent Born approximation; DFPT‑derived options available.

Automation & sweeps

AtomX GUI: a powerful integrated graphical user interface (or Python interface with SWEEP library) for parameter studies and automated post‑processing.

AtomXtoolkit

Automate supercell creation/relaxation/merging and integrate with common DFT packages.

Under the Hood

Technology that enables results

  • High‑performance core: hybrid MPI/OpenMP C++ solvers with sparse, memory‑lean data structures.
  • Self‑consistent convergence: predictor–corrector Poisson‑NEGF methods and smart adaptive damping for robust solutions.
  • Acceleration:  mode‑space NEGF workflows delivering typical 100× speedups on suitable supercells.
  • Scattering physics: state-of-the-art self‑consistent Born formalism, with options from isotropic deformation potentials to DFPT‑derived full matrices.
  • Load balancing: recursive adaptive energy‑grid with master–slave scheduling to catch resonances efficiently.
Mode-Space acceleration speed-up
Mode-Space acceleration for accurate million-atom atomistic NEGF simulation capability.
Applications

Where teams use atomX

2D material transistor screening

Quantify material choice, layer‑count, orientation, and channel‑length trade‑offs; assess mobility and current to shortlist candidates.

2D transistor

2D bandstructures

Drive current vs gate length for various TMDC 2D materials
2D materials screening (ION vs L, mobility, DoS).

Explicit contacts & interfaces

DFT-NEGF transport across metal /semiconductor interfaces enabling efficient material screening and contact engineering.

Metal - 2D semiconductor device
DFT-NEGF computed DoS allowing explicit Schottky barrier extraction
DFT-NEGF contact resistance in a 2D semiconductor - metal contact in function of bias and carrier concentration
Interface transport. 

Novel device concepts

Explore Dirac/"cold source" FETs and van der Waals TFETs; study fundamental physics, sensitivity to scattering and materials.

Dirac FET transistor
Dirac FET IV and SS characteristics
Spectral current and band diagram of a Dirac FET
Cold source Dirac FET study.

CNT‑FET fundamentals

Hybrid‑functional DFT for accurate bandgaps analyze BTBT limits (IMIN) and ION vs. VDD.

CNT transistor

DFT-NEGF predicted Ion vs. chirality in a CNT
CNT‑FET fundamentals.

BioFET simulations

Include ions in solution and electrode models to study single‑molecule detection (e.g., DNA sensing).

              BioFET device
Simulated Ionic screening in a DNA CNT bioFET
BioFET sensing behavior.

Limit of scaling of Si Nanosheets

Surface‑roughness‑driven variability and short‑channel effects for ultrascaled Si/Group‑IV.

Si Nanosheet transistor
  Rough UTB Si nanosheet atomic structure
IV of UTB Si Nanosheets with explicit surface roughness
Surface roughness & variability.
Proof

Performance & validation

  • Agreement with experiments: the deck highlights close match between simulations and WSe₂ device measurements.
  • Scale & efficiency: designed for realistic devices; publications show million‑atom capability and efficient ab‑initio transport at scale.
Experiment - Simulation agreement (WSe2 contact)
 Experiment ↔ Simulation agreement (WSe₂ contacts).
Sun, Z., Afzalian, A., Wu, P. et al. Low-resistance contacts for p-type monolayer tungsten diselenide transistors using metallic layered Nb0.3W0.7Se2. Nat Electron (2026). https://doi.org/10.1038/s41928-026-01568-6
Ecosystem

Fits your workflow

  • DFT sources: plane‑wave (e.g., QE, VASP) with Wannierization, or localized orbital DFT (e.g., OPENMX, CP2K) without Wannierization.
  • Automation:  AtomXtoolkit to build and relax supercells; AtomX GUI A graphical user interface for running, plotting and managing your SWEEP projects.
  • From atoms to I–V: assemble material building blocks into full device geometries and run transport for clean results and plots.
AtomXtoolkit examples & DFT flow integration
AtomXtoolkit examples & DFT flow integration.
Get Started

See atomX in action

Ready to evaluate atomX for your materials and devices? Request a live walkthrough, discuss your use case, or ask about licensing.

Prefer to share slides or device targets first? We’ll suggest a minimal validation plan and next steps.

What to expect

  • 30–45 min discovery + demo tailored to your workflows.
  • Guidance on models (DFT‑NEGF vs TB/effective mass) and runtime/scale expectations.
  • Optional follow‑up with trial access or a pilot study proposal.